3D revolution to GaN transistors
CEI's 3DGaN technology provides a new freedom of design space that is not available to the conventional 2D GaN device. Click the section below to see more details.
Voltage regulators for GPU and CPU in data center
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Power amplifier and power transistor for 5G tower.
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High power converters and inverters for solar farms and electrical vehicles.
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Higher efficiency in power conversion
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Every year there is 20 TWh electricity generated around the world. The majority of electricity will be converted into the form for usage with power electronics which would waste near 15% of the energy.
The loss in power transistor is represented by Figure of Merit (FOM): RonxQg for low voltage power transistors, and RonxQoss for high voltage ones. |
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The larger wafer, the cheaper
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CEI is pioneering in developing 8 inch GaN on Si wafer fabrication process. Scaling up from traditional 6" to 8", CEI can cut down the cost per unit device by 44% which gives us a superior competitive advantage.
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Physics based design keeps superior reliability
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With our deep understanding of the root cause of device reliability, we design the wafer, thin film and device structures to ultimately improve the reliability with our devices having lower dynmiac Rdson increase, less trapping and less trap generation.
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