3D revolution in GaN transistors
Cambridge Electronics, Inc.(CEI)'s 3DGaN® technology provides a new degree of freedom in design that is not available to the conventional planar GaN device. This allows our devices to achieve several competitive advantages over Si and 2D GaN transistors. Click the section below to see more details.
Higher efficiency in power conversion
Every year 20,000 TWh (20,000,000,000 kWh) of electricity is generated around the world. The majority of electricity undergoes voltage and frequency conversion steps which together waste nearly 15% of the energy. Such loss is equivalent to the total annual electricity consumption of 300 million U.S. households.
CEI’s 3DGaN® technology overcomes the efficiency limitations of conventional planar GaN devices and is able to achieve a 4x reduction in energy loss with a significantly smaller module size.
CEI’s 3DGaN® technology overcomes the efficiency limitations of conventional planar GaN devices and is able to achieve a 4x reduction in energy loss with a significantly smaller module size.
High Customization Flexibility
With 3DGaN® technology, we are able to tailor the device for every customer's specific demand.
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Superior reliability from physics based design
Our team’s strong background and experience in semiconductor physics allow us to take a design-for-reliability approach in the design of our devices. We are tackling device reliability issues by mitigating the underlining device degradation mechanisms with simulation based device designs and processes. We also employ all cutting edge material characterization methods to confirm the reliability on nano scale.
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