3D revolution in GaN transistors
Cambridge Electronics, Inc.(CEI)'s 3DGaN® technology provides a new degree of freedom in design that is not available to the conventional planar GaN device. This allows our devices to achieve several competitive advantages over Si and 2D GaN transistors. Click the section below to see more details.
Higher efficiency in power conversion
Every year there is 20 TWh of electricity generated around the world. The majority of electricity will be converted into the form for usage with power electronics which would waste near 15% of the energy.
CEI’s 3DGaN® technology overcomes the efficiency limitations of conventional planar GaN devices and is able to achieve a 4x reduction in energy loss with a significantly smaller module size.
CEI’s 3DGaN® technology overcomes the efficiency limitations of conventional planar GaN devices and is able to achieve a 4x reduction in energy loss with a significantly smaller module size.
|
Low Switching Barrier from Si to 3DGaN® for our Customer
With 3DGaN® technology, we are able to deliver a product with minimum switching barrier. Traditional GaN power devices often have different operational specs than Si, which would require extensive circuit adjustments and additional cost. However, with 3DGaN®'s higher design space, we can tailor to our customer needs with minimum change to their original circuit design. |
|
Superior reliability from physics based design
Our team’s strong background and experience in semiconductor physics allows us to take a design-for-reliability approach in the design of our devices. We are tackling device reliability issues by mitigating the underlining device degradation mechanisms with device designs and processes that 1) manage peak electric field, 2) reduce generation and accumulation of minority carriers, and 3) minimize the hot carriers and induced new traps. We also use extensive TCAD simulations to guide the design of electric field profiles and charge densities in the different regions of the device, utilizing field plates and other field-management structures that have an important impact on device reliability.
|
|