3D revolution to GaN transistors
CEI's 3DGaN technology provides a new freedom of design space that is not available to the conventional planar GaN device. Click the section below to see more details.
Higher efficiency in power conversion
Every year there is 20 TWh electricity generated around the world. The majority of electricity will be converted into the form for usage with power electronics which would waste near 15% of the energy.
The loss in power transistor is represented by Figure of Merit (FOM): RonxQg for low voltage power transistors, and RonxQoss for high voltage ones. The FOM can be directly improved by reducing the gate length Lg. However, a shorter gate length also reduces the transistor breakdown voltage due to short-channel effects.
CEI’s 3DGaN® technology overcomes the limitations of conventional planar device structures and enabled much shorter Lg to achieve 4X improvement of FOM.
The loss in power transistor is represented by Figure of Merit (FOM): RonxQg for low voltage power transistors, and RonxQoss for high voltage ones. The FOM can be directly improved by reducing the gate length Lg. However, a shorter gate length also reduces the transistor breakdown voltage due to short-channel effects.
CEI’s 3DGaN® technology overcomes the limitations of conventional planar device structures and enabled much shorter Lg to achieve 4X improvement of FOM.
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Superior reliability from physics based design
With our deep understanding of the root cause of device reliability, we design the wafer, thin film and device structures to ultimately improve the reliability with our devices having lower dynamic Rdson increase, less trapping and less trap generation.
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